MOSFETs | FDC6420C

N & Pチャネル PowerTrench® MOSFETs 20V

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CAD Model

Overview

これらN&PチャネルMOSFETは、優れたスイッチング性能を維持しながら、オン抵抗を最小限に抑えるように特別に構成された高度なPowerTrench®プロセスを使用して製造されます。これらのデバイスは、より大規模、より高価なSO-8およびTSSOP-8パッケージが実用的でないアプリケーション向けに、非常に小さなフットプリントで並外れた消費電力を提供するように設計されています。

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  • Q1 3.0 A、 20V
  • RDS(on) = 70 mΩ@ VGS = 4.5 V
  • RDS(on) = 95 mΩ @ VGS = 2.5 V
  • Q2 –2.2 A、 20V.
  • RDS(on) = 125 mΩ@ VGS = -4.5 V
  • RDS(on) = 190 mΩ @ VGS = -2.5 V
  • 少量のゲート電荷
  • 超低RDS(ON)
    用の高性能トレンチ技術。
  • SuperSOT -6 パッケージ： 小型 (SO-8より72%小さい)、薄型 (厚さ 1mm)

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDC6420C

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Active

CAD Model

Pb

A

H

P

TSOT-23-6

419BL

1

260

REEL

3000

Y

±20

-

Complementary

Dual

12

1.5

N: 3.0 , P: -2.2

0.96

N: 95, P: 190

N: 70, P: 125

2.3

3.7

337

$0.2133

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