MOSFETs | FDC655BN

NチャネルPowerTrench® MOSFET、Logic Level、30V、6.3A、25mΩ

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Overview

このNチャネル Logic Level MOSFETは、優れたスイッチング性能を維持しながら、オン抵抗を最小限に抑えるように特別に構成された高度なPowerTrenchプロセスを使用して製造されます。これらのデバイスは、低インライン電力損失と高速スイッチングが必要な低電圧およびバッテリー駆動アプリケーションに最適です。

  • ă�“ă�®čŁ˝ĺ“�ă�Żĺ¤šć§�ă�Şç”¨é€”ă�«é�©ă�—ă�źć±Žç”¨ĺ“�ă�§ă�™ă€‚
  • 最大 rDS(ON) = 25 mΩ VGS = 10V、ID = 6.3A
  • 最大 rDS(ON) = 33 mΩ VGS = 4.5V、ID = 5.5A
  • 高速スイッチング
  • 少量のゲート電荷
  • 超低RDS(ON)
    に対する高性能トレンチ技術。
  • 端子は鉛フリーでRoHS対応です。

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDC655BN

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Active

CAD Model

Pb

A

H

P

TSOT-23-6

419BL

1

260

REEL

3000

N

30

25

N-Channel

Single

20

3

6.3

1.6

-

33

8

5

470

$0.1395

More Details

FDC655BN-F40

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Last Shipments

CAD Model

Pb

A

H

P

TSOT-23-6

419BL

1

260

REEL

3000

N

30

25

N-Channel

Single

20

3

6.3

1.6

-

33

8

5

470

Price N/A

More Details

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