Small Signal MOSFETs | FDC8602

デュアル N チャネル・シールド・ゲート PowerTrench® MOSFET 100V 、1.2 A、350 mΩ

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Overview

この N チャネル MOSFET は、rDS(on)、スイッチング性能、堅牢性のために最適化された高度な PowerTrench® プロセスを使用して製造されています。

  • ディストリビューション
  • 最大 rDS(on) = 350 mΩ @ VGS = 10 V、ID = 1.2 A
  • 最大rDS(on) = 575 mΩ @VGS = 6 V、 ID = 0.9 A
  • 超低rDS(on)用の高性能トレンチ技術。
  • 広く使われている表面実装パッケージ中の高電力および電流の処理機能
  • 高速スイッチング速度。
  • UIL 100%テスト済み
  • RoHS対応

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDC8602

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Active

CAD Model

Pb

A

H

P

TSOT-23-6

419BL

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

SC-6

Small Signal

Standard

0

Single

0

100

350

±20

4

1.2

0.96

-

-

2.5

0.6

53

0.4

12

17

0.8

$0.5175

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