Low/Medium Voltage MOSFETs | FDD1600N10ALZ

N チャネル PowerTrench® MOSFET、100V、6.8A、160mΩ

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Overview

この N チャネル MOSFET は、優れたスイッチング性能を維持しながら、オン抵抗を最小限に抑えるように構成された高度な PowerTrench® プロセスを使用して製造されます。

  • LED TV
  • 家電製品

  • RDS(on) = 124mΩ (通常)@ VGS = 10V、 ID = 3.5A
  • RDS(on) = 175mΩ (通常)@ VGS = 5.0V、 ID = 2.1A
  • 少量のゲート電荷 (通常 2.78nC)
  • 低Crss (通常 2.04pF)
  • 高速スイッチング
  • 100%電子なだれテスト済み
  • 改良されたdv/dt能力
  • RoHS対応

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状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDD1600N10ALZ

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Active

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

Y

N-Channel

PowerTrench® T1

DPAK

Low-Medium Voltage

Logic

0

Single

0

100

124

±20

2.8

6.8

14.9

-

200

-

2.78

169

0.56

42

43

2.04

$0.3374

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信頼性データ

Die Related Summary Data

Device: FDD1600N10ALZ

Equivalent to wafer fab process: HVFET

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

HVFET

21

40576236131

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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