Low/Medium Voltage MOSFETs | FDD86102LZ

N チャネル・シールド・ゲート PowerTrench® MOSFET 100 V、35 A、22.5 mΩ

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Overview

この N チャネル MOSFET は、オン抵抗とスイッチング損失を最小限に抑えるように特別に構成された高度な Power Trench® プロセスを使用して製造されます。ESD 電圧レベルを高めるために G-S ツェナーを追加しています。

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  • 最大 rDS(on) = 22.5 mΩ @ VGS = 10 V、ID = 8 A
  • 最大 rDS(on) = 31 mΩ @ VGS = 4.5 V、ID = 7A
  • HBM ESD保護レベル> 6 kV通常(注4)
  • 競合しているトレンチ技術より非常に低いQgおよびQgd
  • 高速スイッチング速度
  • UIL 100%テスト済み
  • RoHS対応

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDD86102LZ

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Active

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

Y

N-Channel

PowerTrench® T1

DPAK

Low-Medium Voltage

Logic

0

Single

0

100

22.5

±20

3

35

54

-

31

-

8.7

1157

2.4

43

181

7.7

$0.5376

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Die Related Summary Data

Device: FDD86102LZ

Equivalent to wafer fab process: T7

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

T7

11

3294609671

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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