Low/Medium Voltage MOSFETs | FDD86326

N チャネル・シールド・ゲート PowerTrench® MOSFET 80 V、37 A、23 mΩ

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Overview

この N チャネル MOSFET は、rDS(on)、スイッチング性能、堅牢性のために最適化された高度な PowerTrench® プロセスを使用して製造されています。

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  • Shielded Gate MOSFET Technology
  • 最大 rDS(on) = 23 mΩ @ VGS = 10 V、ID= 8 A
  • 最大 rDS(on) = 37 mΩ @ VGS = 6 V、ID = 4.6 A
  • 超低rDS(on)用の高性能トレンチ技術。
  • 広く使われている表面実装パッケージ中の高電力および電流の処理機能
  • 競合しているトレンチ技術より非常に低いQgおよびQgd
  • 高速スイッチング速度。
  • UIL 100%テスト済み
  • RoHS対応

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDD86326

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Active

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

Y

N-Channel

PowerTrench® T1

DPAK

Low-Medium Voltage

Standard

0

Single

0

80

23

±20

4

37

62

-

-

-

7.6

780

3.7

43

180

15

$0.8002

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信頼性データ

Die Related Summary Data

Device: FDD86326

Equivalent to wafer fab process: T7

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

T7

11

3294609671

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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