Low/Medium Voltage MOSFETs | FDD86369

N チャネル PowerTrench® MOSFET 80V、90A、7.9mΩ

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Overview

この N チャネル MOSFET は、同期または従来のスイッチング PWM コントローラを使用して、DC/DC コンバータの全体的な効率を改善するために特別に設計されています。低ゲート電荷、低 rDS(ON)、高速スイッチング速度向けに最適化されています。

  • PowerTrain Management
  • Solenoid and Motor Drivers
  • Integrated Starter/Alternator
  • Primary Switch for 12V Systems

  • 標準 rDS(ON) = 5.9mΩ ＠ VGS = 10V、ID = 80A
  • 標準 Qg(tot) = 34 nC ＠ VGS = 10V、ID = 80A
  • UIS能力
  • RoHS に対応

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDD86369

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Active

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

Y

N-Channel

PowerTrench® T6

DPAK

Low-Medium Voltage

Standard

0

Single

0

80

7.9

±20

4

90

150

-

-

-

36

2530

8.5

40

430

16

$0.716

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信頼性データ

Die Related Summary Data

Device: FDD86369

Equivalent to wafer fab process: RN

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

RN

9

5181260142

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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