Low/Medium Voltage MOSFETs | FDD86540

N チャネル PowerTrench® MOSFET 60V、136 A、4.1 mΩ

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Overview

この N チャネル MOSFET は、同期または従来のスイッチング PWM コントローラを使用して、DC/DC コンバータの全体的な効率を改善し、スイッチ・ノードのリンギングを最小限に抑えるために特別に設計されています。低ゲート電荷、低 rDS(ON) 、高速スイッチング速度およびボディ・ダイオードの逆回復性能向けに最適化されています。

  • AC-DC商用パワーサプライ

  • 最大 rDS(on) = 4.1 mΩ @ VGS = 10 V、ID = 21.5 A
  • 最大rDS(on) = 5 mΩ @ VGS = 8 V、ID = 19.5 A
  • 100% UIL試験済み
  • RoHS対応

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状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDD86540

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Active

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

Y

N-Channel

PowerTrench® T6

DPAK

Low-Medium Voltage

Standard

0

Single

0

60

4.1

±20

4

136

127

-

-

-

54

4767

12

43

1409

48

$0.4392

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Die Related Summary Data

Device: FDD86540

Equivalent to wafer fab process: T9

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

T9

0

1733101746

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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