MOSFETs | FDG6332C

20V N&P チャネル PowerTrench® MOSFET

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CAD Model

Overview

これら N&P チャネル MOSFET は、優れたスイッチング性能を維持しながら、オン抵抗を最小限に抑えるように特別に構成された高度な PowerTrench プロセスを使用して製造されます。これらのデバイスは、より大規模、より高価な TSSOP-8 および SSOP-6 パッケージが実用的でないアプリケーション向けに、非常に小さなフットプリントで並外れた消費電力を提供するように設計されています。

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  • Q1 0.7A、20V RDS(ON) = 300mΩ @ VGS = 4.5V RDS(ON) = 400mΩ @ VGS = 2.5V
  • Q2 -0.6A、-20V RDS(ON)=420mΩ@VGS=-4.5VRDS(ON)=630mΩ@VGS=-2.5V
  • 少量のゲート電荷
  • 超低rDS(ON) 用の高性能トレンチ技術
  • SC70-60パッケージ: 小型(SSOT-6より51%小さい)、薄型（厚さ1ミリメートル）

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDG6332C

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Active

CAD Model

Pb

A

H

P

SC-88-6 / SC-70-6 / SOT-363-6

419B-02

1

260

REEL

3000

Y

±20

-

Complementary

Dual

12

±1.5

N: 0.7, P: -0.6

0.3

N:400,P:630

N: 300, P: 420

1.1

1.4

114

$0.1448

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