Low/Medium Voltage MOSFETs | FDMA86251

シングルNチャネルPowerTrench® MOSFET 150V、2.4A、175mΩ

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Overview

このデバイスは、同期降圧型コンバーターの最大効率と熱性能を提供するように設計されています。低rDS（on）およびゲート電荷により、優れたスイッチング性能が提供されます。

  • This product is general usage and suitable for many different applications.

  • 最大 rDS(on) = 170 mΩ at VGS = 10 V, ID = 2.4 A
  • 最大 rDS(on) = 237 mΩ at VGS = 6 V, ID = 2.0 A
  • 低プロファイル；　最大 0.8mm、新パッケージ MicroFET 2x2 mm
  • ハロゲン化合物、アンチモン酸化物を含まない
  • RoHS 対応

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状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMA86251

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Active

CAD Model

Pb

A

H

P

WDFN-6

511DB

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

Power 22

Low-Medium Voltage

Standard

0

Single

0

150

175

±20

4

2.4

2.4

-

-

-

3.4

259

1

38

24

1.5

$0.3218

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信頼性データ

Die Related Summary Data

Device: FDMA86251

Equivalent to wafer fab process: RN

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

RN

9

5181260142

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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