Low/Medium Voltage MOSFETs | FDMA905P

-12V シングルPチャネルPowerTrench® MOSFET

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Overview

このデバイスは、携帯電話のハンドセットや他の超軽量用途におけるバッテリの充電や負荷のスイッチングのために特別に設計されています。 低いオン抵抗のMOSFETを備えています。
MicroFET 2×2パッケージはその物理的なサイズの割に、卓越した熱的性能を提供し、線形モード用途に適しています。

  • 携帯電話端末

  • 最大 rDS(on) = 16 mΩ @ VGS = -4.5 V、ID = -10 A
  • 最大 rDS(on) = 21 mΩ @ VGS = -2.5 V、ID = -8.9 A
  • 最大 rDS(on) = 82 mΩ @ VGS = -1.8 V、ID = -4.5 A
  • 低プロファイル - 最大0.8mm、新パッケージ MicroFET2x2 mm
  • ハロゲン化合物、アンチモン酸化物フリー
  • RoHS対応

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMA905P

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Active

CAD Model

Pb

A

H

P

WDFN-6

511CZ

1

260

REEL

3000

Y

P-Channel

PowerTrench® T1

Power 22

Low-Medium Voltage

Logic

0

Single

0

-12

-

8

-1

-10

2.4

21

16

21

21

2559

-

-

-

-

$0.1808

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Die Related Summary Data

Device: FDMA905P

Equivalent to wafer fab process: RT

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

RT

0

153640249

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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