Low/Medium Voltage MOSFETs | FDMC008N08C

N チャネル・シールドゲート PowerTrench® MOSFET 80V、60A、7.8mΩ

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Overview

この N チャネル MV MOSFET は、シールドゲート技術を組み込んだオン・セミコンダクターの高度な PowerTrench® プロセスを使用して製造されています。このプロセスは、オン抵抗を最小限に抑えながら、インクラスのソフト・ボディ・ダイオードを維持するように最適化されています。

  • This product is general usage and suitable for many different applications.

  • シールドゲートMOSFET技術
  • 最大rDS(on) = 7.8 m @ VGS = 10 V、ID = 21 A
  • 最大rDS(on) = 19.3 m @ VGS = 6 V、ID = 10 A他のMOSFETメーカーより
  • 50% 低いQrr
  • スイッチングノイズ/EMIを低減
  • MSL1堅牢パッケージ設計
  • UIL 100%テスト済み
  • RoHS準拠

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMC008N08C

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Active

CAD Model

Pb

A

H

P

PQFN-8

483AW

1

260

REEL

3000

Y

N-Channel

PowerTrench® T8

Power 33 (u8FL)

Low-Medium Voltage

Standard

0

Single

0

80

7.8

4

4

60

57

-

-

58

13

1535

3.8

27

517

19

$0.8414

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Die Related Summary Data

Device: FDMC008N08C

Equivalent to wafer fab process: HVFET

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

HVFET

21

40576236131

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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