N チャネル UltraFET Trench® MOSFET 200V、9.5A、200mΩ

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Overview

この N チャネル MOSFET は、高度な PowerTrench プロセスの堅牢性に優れたゲートバージョンです。電源管理アプリケーション向けに最適化されています。

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  • 最大 rDS(on) = 200mΩ @ VGS = 10V、ID = 2.2A
  • 最大 rDS(on) = 215mΩ @ VGS = 6V、ID = 1.5A
  • 低プロファイル - MicroFET 3.3 x 3.3 mmで最高1 mm
  • RoHS対応

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製品:

1

共有

Product Groups:

Orderable Parts:

1

製品

状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMC2610

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Active

CAD Model

Pb

A

H

P

WDFN-8

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

Power 33 (u8FL)

Low-Medium Voltage

Standard

0

Single

0

200

200

±20

4

9.5

42

-

-

7.1

12.3

720

3.6

114

41

12

$0.9144

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