Low/Medium Voltage MOSFETs | FDMC6686P

Pチャネル PowerTrench® MOSFET -20V、-56A、4mΩ

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Overview

このPチャネルMOSFETは、rDS（on）、スイッチング性能、堅牢性のために最適化された高度なPowerTrench®プロセスを使用して製造されています。

  • This product is general usage and suitable for many different applications.

  • 最大 rDS(on) = 4 mΩ at VGS = -4.5 V, ID = -18 A
  • 最大 rDS(on) = 5.7 mΩ at VGS = -2.5 V, ID = -16 A
  • 最大 rDS(on) =11.5 mΩ at VGS = -1.8 V, ID = -11 A
  • 超低RDS(on)用高性能トレンチ技術
  • 広く使われている表面実装パッケージ中の高電力および電流の処理機能
  • 鉛フリーで RoHS 対応です

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状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMC6686P

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Active

CAD Model

Pb

A

H

P

PQFN-8

483AX

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

Power 33 (u8FL)

Low-Medium Voltage

Logic

0

Single

0

-20

-

8

-1

-56

40

5.7

4

1.8

87

8800

-

-

-

-

$0.6071

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信頼性データ

Die Related Summary Data

Device: FDMC6686P

Equivalent to wafer fab process: U4

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

U4

0

1599145130

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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