Low/Medium Voltage MOSFETs | FDMC8010DC

N チャネル Dual CoolTM 33 PowerTrench® MOSFET 30V、157A、1.28mΩ

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Overview

この N チャネル MOSFET は、高度な PowerTrench® プロセスを用いて製造されています。シリコン技術および Dual Cool™ パッケージ技術の両方の進歩が組み合わされ、最小の rDS(on) を実現しながら、接合部から周囲への熱抵抗を極めて低く抑えることで卓越したスイッチング性能を維持します。

  • This product is general usage and suitable for many different applications.

  • Dual Cool™ Top Side Cooling PQFN package
  • Max rDS(on) = 1.28 mΩ at VGS = 10 V, ID = 37 A
  • Max rDS(on) = 1.74 mΩ at VGS = 4.5 V, ID = 32 A
  • High Performance Technology for Extremely Low rDS(on)
  • RoHS Compliant

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMC8010DC

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Active

CAD Model

Pb

A

H

P

PQFN-8

483AY

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

Power 33 Dual Cool

Low-Medium Voltage

Logic

0

Single

0

30

1.28

3

3

157

50

-

1.74

-

32

4720

-

-

-

-

$0.4987

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Die Related Summary Data

Device: FDMC8010DC

Equivalent to wafer fab process: U4

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

U4

0

1599145130

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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