Low/Medium Voltage MOSFETs | FDMC8097AC

デュアル N & P チャネルPowerTrench® MOSFET 150V

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Overview

これらのデュアル N&P チャネル拡張モー ドMOSFET は、優れたスイッチング性能を維持しながら、オン抵抗を最小限に抑えるように特別に構成された高度な PowerTrench® プロセスを使用して製造されます。アクティブ・クランプ技術の実装に必要な領域を縮小して、クラス最高の電力密度を可能にしています。

  • This product is general usage and suitable for many different applications.

  • Q1: Nチャネル：
  • 最大 rDS(on) = 2.2 mΩ @ VGS = 8 V、ID = 27 A
    Q2: Pチャンネル
  • アクティブなクランプ・フォワード・コンバーターに対する最適化
  • RoHS 対応

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状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMC8097AC

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Active

CAD Model

Pb

A

H

P

WDFN-8

511DG

1

260

REEL

3000

Y

Complementary

PowerTrench® T1

Power 33 (u8FL)

Low-Medium Voltage

Standard

0

Dual

0

150

155

20

4

2.4

1.9

~NA~

~NA~

7.2

1.2

162

1

43

13

1.4

$1.7547

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信頼性データ

Die Related Summary Data

Device: FDMC8097AC

Equivalent to wafer fab process: RN,T7

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

RN,T7

0

79845365

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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