Low/Medium Voltage MOSFETs | FDMC8200

デュアルNチャネル PowerTrench® MOSFET 30V、9.5A、20mΩ

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Overview

このデバイスには、デュアルPower 33（3 mm X 3 mm MLP）パッケージに2つの特別な NチャネルMOSFETが含まれています。スイッチノードは内部で接続されており、同期バックコンバーターの配置とルーティングを容易にします。制御MOSFET（Q1）および同期MOSFET（Q2）は、最適な電力効率を提供するように設計されています。

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  • Q1: Nチャンネル
  • 最大 RDS(on) = 32 mΩ @ VGS = 4.5 V、ID = 5A
    Q2: Nチャンネル
  • RoHS対応

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状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMC8200

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Active

CAD Model

Pb

A

H

P

WDFN-8

511DE

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

Power 33 (u8FL)

Low-Medium Voltage

Logic

0

Dual

0

30

Q1: 20, Q2: 9.5

20

3

Q1: 8.0, Q2: 12.0

Q1: 1.9; Q2: 2.2

-

Q1: 32, Q2: 13.5

7.6

7

1180

-

-

-

-

$0.2668

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Die Related Summary Data

Device: FDMC8200

Equivalent to wafer fab process: RM

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

RM

0

1284986536

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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