Low/Medium Voltage MOSFETs | FDMC8321LDC

N チャネル Power Trench® MOSFET 40V、108A、2.5mΩ

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Overview

この N チャネル MOSFET は、高度な PowerTrench® プロセスを用いて製造されています。シリコン技術および Dual Cool TM パッケージ技術の両方の進歩が組み合わされ、最低の rDS(on) を実現しながら、接合部から周囲への熱抵抗を極めて低く抑えることで卓越したスイッチング性能を維持します。

  • This product is general usage and suitable for many different applications.

  • Dual CoolTM上面冷却PQFNパッケージ
  • 最大 rDS(on) = 2.5 mΩ @ VGS = 10 V、ID = 27 A
  • 最大 rDS(on) = 4.1 mΩ @ VGS = 4.5 V、ID = 21 A
  • 超低rDS(on)
    の高パフォーマンス技術
  • RoHS 対応

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMC8321LDC

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Die Related Summary Data

Device: FDMC8321LDC

Equivalent to wafer fab process: U5

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

U5

0

54180784

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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