Low/Medium Voltage MOSFETs | FDMC86260ET150

150V N チャンネル PowerTrench® MOSFET

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Overview

このNチャンネルMOSFETは、フェアチャイルドセミコンダクター社の高度なPower Trench® プロセスを使用して生産され、オン抵抗を最小化する一方、優れたスイッチング性能を維持するよう特に調整されています。

  • DC-DC商用パワーサプライ

  • 175°Cまでの拡張TJ定格
  • 最大 rDS(on) = 34 mΩ @ VGS = 10 V、ID = 5.4 A
  • 最大 rDS(on) = 44 mΩ @ VGS = 6 V、ID = 4.8 A
  • 超低rDS(on)の高パフォーマンス技術
  • 100% UILテスト済み
  • 終端は鉛フリー
  • RoHS準拠
    "

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMC86260ET150

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Active

CAD Model

Pb

A

H

P

PQFN-8

483AW

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

Power 33 (u8FL)

Low-Medium Voltage

Standard

0

Single

0

150

34

±20

4

25

65

-

-

-

9.7

1000

3.1

85

105

4.8

$0.8685

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Die Related Summary Data

Device: FDMC86260ET150

Equivalent to wafer fab process: RH

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

RH

0

779824089

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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