Low/Medium Voltage MOSFETs | FDMC86262P

P チャネル PowerTrench® MOSFET -150 V、-2 A、307 mΩ

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Overview

この P チャネル MOSFET は、高度な PowerTrench® 技術を使用して製造されています。この非常に高密度のプロセスは、特にオン抵抗を最小化しするように構成され、優れたスイッチング性能のために最適化されています。

  • Industrial
  • Portable and Wireless

  • 最大rDS(on) = 307 mΩ @ VGS = -10 V、ID = -2 A
  • 最大rDS(on) = 356 mΩ @ VGS = -6 V、ID = -1.8 A
  • 低Qgに最適化された超低rDS(on)中電圧Pチャンネルシリコン技術
  • 高速スイッチング用途や負荷スイッチ用途に最適化
  • 100% UILテスト済み
  • RoHS 対応

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状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMC86262P

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Active

CAD Model

Pb

A

H

P

WDFN-8

511DH

1

260

REEL

3000

Y

P-Channel

PowerTrench® T1

Power 33 (u8FL)

Low-Medium Voltage

Standard

0

Single

0

-150

307

±25

-4

-2

40

-

-

-

5.6

632

1.6

166

45

1.3

$0.4242

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信頼性データ

Die Related Summary Data

Device: FDMC86262P

Equivalent to wafer fab process: T7

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

T7

11

3294609671

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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