Low/Medium Voltage MOSFETs | FDME820NZT

N チャネル PowerTrench® MOSFET 20V、9A、18mΩ

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Overview

このシングル N チャネル MOSFET は、特別な MicroFET リードフレームで rDS(ON) @ VGS = 1.8 V を最適化するために、高度な Power Trench プロセスを使用して設計されています。

  • This product is general usage and suitable for many different applications.

  • 最大 rDS(on) = 18 mΩ @ VGS = 4.5 V、ID = 9 A
  • 最大 rDS(on) = 24 mΩ @ VGS = 2.5 V、ID = 7.5 A
  • 最大 rDS(on) = 32 mΩ @ VGS = 1.8 V、ID = 7 A
  • 低プロファイル 新パッケージMicroFET 1.6x1.6 Thinで、最大0.55mm
  • ハロゲン化合物、アンチモン酸化物フリー
  • HBM ESD保護レベル >2.5kV (注3)
  • RoHS対応

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDME820NZT

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Active

CAD Model

Pb

A

H

P

UDFN-6

517DV

1

260

REEL

5000

Y

N-Channel

PowerTrench® T1

Power 22

Low-Medium Voltage

Logic

0

Single

0

20

-

12

1

9

2.1

24

18

15

8.5

865

-

-

-

-

$0.2691

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信頼性データ

Die Related Summary Data

Device: FDME820NZT

Equivalent to wafer fab process: U4

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

U4

0

1599145130

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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