Low/Medium Voltage MOSFETs | FDMQ8203

デュアルNチャネル&デュアル PチャネルPowerTrench® MOSFET、GreenBridge™シリーズ高効率ブリッジ整流器

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Overview

このクワッドMOSFETソリューションは、ダイオードブリッジに比べて電力損失を10倍改善します。

  • セントラルオフィス

  • Q1/Q4: Nチャンネル
  • RoHS対応
  • 最大 rDS(on) = 175 mΩ @ VGS = 6 V、ID = 2.4 A
    Q2/Q3: Pチャンネル
  • RoHS Compliant

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMQ8203

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CAD Model

Pb

A

H

P

WDFN-12

511CS

1

260

REEL

3000

Y

Complementary

PowerTrench® T1

WDFN-12

Low-Medium Voltage

Standard

0

Dual

0

±100

N: 110, P: 190

±20

Q1,Q4:4.0, Q2,Q3: -3.0

N: 6.0, P: -6.0

Q1: 22, Q2:37

-

-

-

6.4

Q1/Q4= 158, Q2/Q3: 639

Q1/Q4: 0.8 Q2/Q3: 2.6

Q1/Q4: 21 Q2/Q3: 26

Q1/Q4: 41 Q2/Q3: 46

Q1/Q4: 2.6 Q2/Q3: 24

$0.5996

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信頼性データ

Die Related Summary Data

Device: FDMQ8203

Equivalent to wafer fab process: T7,TR

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

T7,TR

0

61439453

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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