Low/Medium Voltage MOSFETs | FDMS10C4D2N

N チャネル・シールド・ゲート PowerTrench® MOSFET 100V、124A、4.2mΩ

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Overview

この N チャネル MV MOSFET は、シールド・ゲート技術を組み込んだ高度な PowerTrench® プロセスを使用して製造されています。このプロセスは、オン抵抗を最小限に抑えながら、ベストインクラスのソフトボディ・ダイオードで優れたスイッチング性能を維持するように最適化されています。

  • This product is general usage and suitable for many different applications.

  • シールドゲートMOSFET技術
  • 最大rDS(on) = 4.2 mΩ ＠ VGS = 10 V、ID = 44 A
  • 最大rDS(on) = 14 mΩ ＠ VGS = 6 V、ID = 22 A
  • ADD
  • 他のMOSFETメーカーより50%低いQrr
  • スイッチングノイズ/EMIを低減
  • MSL1堅牢パッケージ設計
  • UIL 100%テスト済み
  • RoHS準拠

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMS10C4D2N

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Active

CAD Model

Pb

A

H

P

PQFN-8

483AE

1

260

REEL

3000

Y

N-Channel

PowerTrench® T8

Power 56 (SO-8FL)

Low-Medium Voltage

Standard

0

Single

0

100

4.2

±20

4

124

125

-

-

-

27

2945

9.3

158

1730

20

$1.2997

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Die Related Summary Data

Device: FDMS10C4D2N

Equivalent to wafer fab process: HVFET

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

HVFET

21

40576236131

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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