MOSFETs | FDMS4D4N08C

N チャネル・シールド・ゲート PowerTrench® MOSFET 80V 、123A、4.3mΩ

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Overview

この N チャネル MV MOSFET は、シールドゲート技術を組み込んだ高度な PowerTrench® プロセスを使用して製造されています。このプロセスは、オン抵抗を最小限に抑えながら、ベストインクラスのソフトボディ・ダイオードで優れたスイッチング性能を維持するように最適化されています。

  • This product is general usage and suitable for many different applications.
  • シールドゲートMOSFET技術
  • 最大rDS(on) = 4.3 mΩ @ VGS = 10 V、ID = 44 A
  • 最大rDS(on) = 10.4 mΩ ＠ VGS = 6 V、ID = 22 A
  • 他のMOSFETメーカーより50%低いQrr
  • スイッチングノイズ/EMIを低減
  • MSL1堅牢なパッケージ設計
  • 100% UILテスト済み
  • RoHS準拠

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMS4D4N08C

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Active

CAD Model

Pb

A

H

P

PQFN-8

483AE

1

260

REEL

3000

Y

80

4.3

N-Channel

Single

±20

4

123

125

-

-

-

25

2920

$1.1488

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