Low/Medium Voltage MOSFETs | FDMS8320LDC

N チャネル Dual CoolTM 56 Power Trench® MOSFET 40V、192A、1.1mΩ

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Overview

この N チャネル MOSFET は、高度な PowerTrench® プロセスを用いて製造されています。シリコン技術および Dual Cool™ パッケージ技術の両方の進歩が組み合わされ、最低の rD(on) を実現しながら、接合部から周囲への熱抵抗を極めて低く抑えることで卓越したスイッチング性能を維持します。

  • 発電と配電

  • 最大 rDS(on) = 1.1 mΩ @ VGS = 10 V、ID = 44 A
  • 最大 rDS(on) = 1.5 mΩ @ VGS = 4.5 V、ID = 37 A
  • 低rDS(on) と高効率のための高度なパッケージとシリコンの組み合わせ
  • 次世代強化ボディーダイオード技術、ソフトリカバリ用に設計。
  • MSL1 堅牢なパッケージ設計
  • UIL 100%テスト済み
  • RoHS準拠

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMS8320LDC

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Active

CAD Model

Pb

A

H

P

DFN-8

506EG

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

Power 56 Dual Cool

Low-Medium Voltage

Logic

0

Single

0

40

1.1

±20

3

192

125

-

1.5

-

57

8310

16

89

2255

132

$0.9341

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信頼性データ

Die Related Summary Data

Device: FDMS8320LDC

Equivalent to wafer fab process: RN

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

RN

9

5181260142

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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