Low/Medium Voltage MOSFETs | FDMS86101DC

NチャネルDual CoolTM 56 PowerTrench® MOSFET 100V、60A、7.5mΩ

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Overview

このNチャネル MOSFETは、シールドゲート技術を組み込んだ高度なPowerTrench®プロセスを使用して製造されています。シリコン技術およびDual Cool™パッケージ技術の両方の進歩が組み合わされ、最低のrDS（on）を実現しながら、接合部から周囲への熱抵抗を極めて低く抑えることで卓越したスイッチング性能を維持します。

  • DC-DC商用パワーサプライ

  • シールドゲートMOSFET技術
  • Dual Cool トップ側冷却PQFNパッケージ
  • 最大 rDS(on) = 7.5 mΩ @ VGS = 10 V、ID = 14.5 A
  • 最大 rDS(on) = 12 mΩ @ VGS = 6 V、ID = 11.5 A
  • 超低rDS(on)の高パフォーマンス技術
  • 100% UILテスト済み
  • RoHS準拠

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMS86101DC

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Active

CAD Model

Pb

A

H

P

DFN-8

506EG

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

Power 56 Dual Cool

Low-Medium Voltage

Standard

0

Single

0

100

7.5

±20

4

60

125

-

-

-

18

2354

7

62

467

23

$1.8001

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信頼性データ

Die Related Summary Data

Device: FDMS86101DC

Equivalent to wafer fab process: T7

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

T7

11

3294609671

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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