Low/Medium Voltage MOSFETs | FDMS86105

N チャネル・シールド・ゲート PowerTrench® MOSFET 100V、26A、34mΩ

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Overview

この N チャネル MOSFET は、優れたスイッチング性能を維持しながら、オン抵抗を最小限に抑えるように特別に構成された高度な Power Trench® プロセスを使用して製造されます。

  • DC-DC商用パワーサプライ

  • Shielded Gate MOSFET Technology
  • 最大 rDS(on) = 34 mΩ @ VGS = 10 V、ID = 6 A
  • 最大 rDS(on) = 54 mΩ @ VGS = 6 V、ID = 4.5 A
  • 低rDS(on) と高効率のための高度なパッケージとシリコンの組み合わせ
  • MSL1の堅牢なパッケージ設計
  • 100%のUILがテスト済み
  • RoHS対応

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMS86105

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Active

CAD Model

Pb

A

H

P

PQFN-8

483AE

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

Power 56 (SO-8FL)

Low-Medium Voltage

Standard

0

Single

0

100

34

±20

4

26

48

-

-

-

4.2

483

1.7

32

114

5

$0.7112

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信頼性データ

Die Related Summary Data

Device: FDMS86105

Equivalent to wafer fab process: T7

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

T7

11

3294609671

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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