MOSFETs | FDMS86252L

Nチャネルシールドゲート PowerTrench® MOSFET 150V、12A、56mΩ

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Overview

このNチャネル MOSFETは、シールドゲート技術を組み込んだ高度なPowerTrench®プロセスを使用して製造されています。このプロセスは、オン抵抗向けに最適化され、同様に優れたスイッチング性能を維持します。

  • This product is general usage and suitable for many different applications
  • シールドゲートMOSFET技術
  • 最大 rDS(on) = 56 mΩ @ VGS = 10 V、ID = 4.4 A
  • 最大 rDS(on) = 56 mΩ @ VGS = 6 V、 ID = 3.8 A
  • 最大 rDS(on) = 75 mΩ @ VGS = 4.5 V、ID = 3.7 A
  • 低いrDS(on)と高効率
    のための高度なパッケージとシリコンの組み合わせ
  • ソフトリカバリー用に設計された、次世代の強化型ボディーダイオード技術
  • MSL1の堅牢なパッケージ設計
  • 100%のUILがテスト済み
  • RoHS対応

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMS86252L

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Active

CAD Model

Pb

A

H

P

PQFN-8

483AE

1

260

REEL

3000

Y

150

56

N-Channel

Single

±20

3

12

50

-

75

-

7.6

952

$0.7837

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