Low/Medium Voltage MOSFETs | FDMT1D3N08B

NチャネルDual CoolTM 88 PowerTrench® MOSFET 80V 164A、1.35mΩ

Lifetime

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Overview

このNチャネルMOSFETは、高度な PowerTrench® プロセスを用いて製造されています。シリコン技術およびDual Cool TMパッケージ技術の両方の進歩が組み合わされ、最低のrDS（on）を実現しながら、接合部から周囲への熱抵抗を極めて低く抑えることで卓越したスイッチング性能を維持します。

  • Oring FET / Load Switch
  • Synchronous Rectification
  • DC-DC Conversion

  • 最大rDS(on) = 0.56 mΩ ＠ VGS = 10 V、ID = 64 A
  • 最大 rDS(on) = 0.9 mΩ @ VGS = 6 V、ID = 47 A
  • 低いrDS(on) と高効率のための高度なパッケージとシリコンの組み合わせ
  • ソフトリカバリー用に設計された、次世代の強化型ボディーダイオード技術
  • 薄型 8x8mm MLP パッケージ
  • MSL1堅牢なパッケージ設計
  • 100% UILテスト済み
  • RoHS準拠

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMT1D3N08B

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Lifetime

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Pb

A

H

P

PQFN-8

483AQ

1

260

REEL

3000

N

N-Channel

PowerTrench® T6

Power 88 Dual Cool

Low-Medium Voltage

Standard

0

Single

0

80

1.35

±20

4

164

178

-

-

-

152

14000

37

90

2050

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$3.0255

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信頼性データ

Die Related Summary Data

Device: FDMT1D3N08B

Equivalent to wafer fab process: T9

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

T9

0

1733101746

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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