MOSFETs | FDN357N

NチャネルLogic Level拡張モード電界効果トランジスタ 30V、1.9A、90mΩ

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Overview

SuperSOT™-3 NチャネルLogic Level拡張モード電界効果トランジスタは独自の高セル密度のDMOS技術を使用して製造されています。この非常に高密度のプロセスは、特にオン抵抗を最小化するよう構成されています。特に、これらのデバイスは、非常に小さな外形の表面実装パッケージで迅速なスイッチングおよびインライン電力損失の低減が必要なノートPC、携帯電話、PCMCIAカード、およびその他のバッテリー駆動回路の低電圧アプリケーションに適しています。

  • ă�“ă�®čŁ˝ĺ“�ă�Żĺ¤šć§�ă�Şç”¨é€”ă�«é�©ă�—ă�źć±Žç”¨ĺ“�ă�§ă�™ă€‚
  • Battery Powered Circuits
  • Notebook Computers
  • Portable Phones
  • PCMCIA cards
  • 1.9 A、 30 V、   RDS(ON) = 0.090 Ω @ VGS = 4.5 V、RDS(ON) = 0.060 Ω @ VGS = 10 V.
  • RDS(ON) = 0.090 Ω @ VGS = 4.5 V
  • RDS(ON) = 0.060 Ω @ VGS = 10 V
  • 優れた熱および電気機能のための独自のSuperSOT™-3設計を使用した、業界標準輪郭SOT-23表面実装パッケージ
  • 超低RDS(ON)用の高密度セル設計
  • 卓越したオン抵抗、および最大DC電流機能

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDN357N

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Active

CAD Model

Pb

A

H

P

SOT-23-3

527AG

1

260

REEL

3000

N

30

60

N-Channel

Single

20

2

1.9

0.5

-

90

5

4.2

235

$0.1519

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