MOSFETs | FDPF4D5N10C

N チャネル・シールド・ゲート PowerTrench® MOSFET 100V、128A、4.5mΩ

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Overview

この N チャネル MV MOSFET は、シールドゲート技術を組み込んだオン・セミコンダクターの高度な PowerTrench® プロセスを使用して製造されています。このプロセスは、オン抵抗を最小限に抑えながら、ベストインクラスのソフトボディ・ダイオードで優れたスイッチング性能を維持するように最適化されています。

  • Synchronous Rectification for ATX / Server / Workstation / Telecom PSU / Adapter and Industrial Power Supplies.
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • Server
  • Telecom
  • Computing ( ATX, Workstation, Adapter, Industrial Power Supplies etc. )
  • Motor Drive
  • Uninterruptible Power Supplies
  • Solar Inverter
  • Max RDS(on) = 4.5 mΩ at VGS = 10 V, ID = 128 A
  • High Performance Trench Technology for Extremely Low RDS(on)
  • Extremely Low Reverse Recovery Charge, Qrr
  • Low Gate Charge, QG = 48nC ( Typ.)
  • High Power and Current Handling Capability
  • 100% UIL Tested
  • RoHS Compliant

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDPF4D5N10C

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Active

CAD Model

Pb

A

H

P

TO-220-3 FullPak

221AT

NA

0

TUBE

1000

Y

100

4.5

N-Channel

Single

20

4

128

37.5

-

-

-

48

3615

$2.6054

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