Small Signal MOSFETs | FDS4435BZ

PチャネルPowerTrench® MOSFET、-30V、-8.8A、20mΩ

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Overview

このPチャネルMOSFETは、オン抵抗を最小限に抑えるように特別に構成された高度なPower Trench®プロセスを使用して製造されます。このデバイスは、ノートPCやポータブルバッテリーパックで一般的な電源管理およびrロードスイッチアプリケーションに最適です。

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  • 最大 rDS(on) = 20mΩ @ VGS = –10V、ID = –8.8A
  • 最大 rDS(on) = 35mΩ @ VGS = –4.5V、ID = –6.7A
  • バッテリ用の拡張VGSS範囲 (-25V)
  • ±3.8KV通常のHBM ESD保護レベル （注 3）
  • 超低rDS(on)用の高性能トレンチ技術
  • 高い電力および電流処理能力
  • 終端は、鉛フリーそしてRoHS対応

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDS4435BZ

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Active

CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

N

P-Channel

PowerTrench® T1

SOIC-8

Small Signal

Logic

0

Single

0

-30

20

25

-3

-8.8

2.5

-

35

86

16

1385

-

-

-

-

$0.2405

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