MOSFETs | FDS6673BZ_F085

Pチャネル PowerTrench® MOSFET -30V、-14.5A、7.8mΩ

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Overview

このPチャネルMOSFETは、オン抵抗を最小限に抑えるように特別に構成された高度なPower Trenchプロセスを使用して製造されます。このデバイスは、ノートPCやポータブルバッテリーパックで一般的な電源管理およびロードスイッチアプリケーションに最適です。

  • インフォテインメント
  • ポータブルナビゲーション
  • その他
  • パワートレイン
  • 安全と管理
  • 快適性と利便性
  • ボディエレクトロニクス
  • 車両安全システム
  • その他のオートモーティブ
  • 最大 rDS(on) = 7.8 mΩ、 VGS = -10 V、ID = -14.5 A
  • 最大 rDS(on) = 12 mΩ、 VGS = -4.5 V、ID = -12 A
  • バッテリ用の拡張VGS範囲 (-25V)
  • HBM ESD保護レベル6.5kV通常(注3)
  • 超低rDS(ON)用の高性能トレンチ技術
  • 高電力および電流処理能力
  • RoHS対応
  • AEC Q101認定取得

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状態

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDS6673BZ-F085

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Obsolete

CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

N

-30

7.8

P-Channel

Single

25

-3

-14.5

2.5

-

12

25

88

3500

Price N/A

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