MOSFETs | FDS86267P

P チャネル・シールド・ゲート PowerTrench® MOSFET -150V、-2.2A、255mΩ

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Overview

この P チャネル MOSFET は、シールド・ゲート技術を組み込んだ高度な PowerTrench® プロセスを使用して製造されています。このプロセスは、オン抵抗向けに最適化され、同様に優れたスイッチング性能を維持します。

  • Active Clamp Switch
  • Load Switch
  • シールドゲートMOSFET技術
  • 最大 rDS(on) = 255 mΩ @ VGS = -10 V、ID = -2.2 A
  • 最大 rDS(on) = 290 mΩ @ VGS = -6 V、ID = -2 A
  • 低Qgに最適化された超低rDS(on)中電圧Pチャンネルシリコン技術
  • この製品は、負荷スイッチ用途だけでなく高速スイッチングにも最適化されています
  • 100% UILテスト済み
  • RoHS 対応

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDS86267P

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Active

CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

Y

-150

255

P-Channel

Single

±25

-4

-2.2

2.5

-

-

-

7

806

$0.5597

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