MOSFETs | FDS8958A

デュアル N & P チャネル PowerTrench® MOSFET 30V

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CAD Model

Overview

これらデュアル N および P チャネル・エンハンスメントモード電界効果トランジスタは、優れたスイッチング性能を維持しながら、オン抵抗を最小限に抑えるように特別に構成された高度な PowerTrench プロセスを使用して製造されています。これらのデバイスは、インライン型の低い電力損失と高速スイッチングが必要な低電圧およびバッテリ駆動アプリケーションに最適です。

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  • Q1: Nチャンネル7.0A、30V
    RDS(ON)=0.028Ω@VGS=10V
    RDS(ON)=0.040Ω@VGS=4.5V
  • Q2: Pチャンネル-5A、-30V
    RDS(ON)=0.052Ω@VGS=-10V
    RDS(ON)=0.080Ω@VGS=-4.5V
  • 高速スイッチング速度。
  • 表面実装パッケージで広く採用されている高出力、高処理能力

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状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDS8958A

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Lifetime

CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

N

±30

N: 28.0 , P: 52.0

Complementary

Dual

±20

± 3.0

N: 7.0, P: 5.0

2

-

N: 40.0 , N: 80.0

-

N: 11.5, P:9.6

N: 575, Q2:528

$0.2975

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