FQP7N20

Power MOSFET, N-Channel, QFET^®, 200 V, 6.6 A, 0.69 Ω, TO-220

Overview

These N-Channel enhancement mode power field effect transistors are produced using ON's proprietary, planar stripe, DMOS technology.This device is well suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterruped power supply and motor control

アプリケーション

DC/DC Converters
Switched Mode Power Supplies
DC-AC Converters for Uninterrupted Power Supply
Motor Control

特長

6.6A, 200V, R_DS(ON) = 0.69Ω @ V_GS = 10 V
Low gate charge (typical 8.0nC)
Low Crss (typical 9.0pF)
Fast switching
100% avalanche tested
Improved dv/dt capability

材料組成

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状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FQP7N20

Last Shipments

TO-220-3

340AT

TUBE

1000

200

690

N-Channel

Single

6.6

300

Price N/A

製品番号:

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MOSFETs | FQP7N20

Power MOSFET, N-Channel, QFET®, 200 V, 6.6 A, 0.69 Ω, TO-220

Overview

Product List

営業窓口へのメール

Power MOSFET, N-Channel, QFET^®, 200 V, 6.6 A, 0.69 Ω, TO-220