MOSFETs | FQT1N60C

パワー MOSFET、N チャネル、QFET®、600V、0.2A、11.5Ω、SOT-223

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この N チャネル・エンハンスメントモード・パワー MOSFET は、当社独自のプレーナ・ストライプおよび DMOS 技術を使用して製造されています。この高度な MOSFET 技術は、オン抵抗を低減し、スイッチング性能とアバランシェ・エネルギー強度を向上させるよう構成されています。これらのデバイスは、スイッチ・モード電源、アクティブ力率補正 (PFC) 、および電子ランプ・バラストに適しています。

  • 照明用
  • 0.2A、 600V、 RDS(on) = 9.3Ω(通常) @VGS = 10 V、ID = 0.1A
  • 少量のゲート電荷 (通常 4.8nC)
  • 低Crss (通常 3.5pF）
  • 100%電子なだれテスト済み
  • RoHS対応

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