FQT1N60CTF-WS

Power MOSFET, N-Channel, QFET^®, 600 V, 0.2 A, 11.5 Ω, SOT-223

Overview

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

アプリケーション

Computiong
Consumer
Industrial

最終製品

Notebook / Desktop computer
LED Lighting / Ballast
Adapter

特長

0.2A, 600V, R_DS(on) = 9.3Ω(Typ.) @V_GS = 10 V, I_D = 0.1A
Low gate charge ( Typ. 4.8nC)
Low C_rss ( Typ. 3.5pF)
100% avalanche tested
RoHS compliant

材料組成

製品変更通知

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製品

状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

V_GS Max (V)

V_gs(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Q_gd Typ @ V_GS = 4.5 V (nC)

Q_rr Typ (nC)

C_oss Typ (pF)

C_rss Typ (pF)

Reference Price

FQT1N60CTF-WS

Active

SOT-223-4 / TO-261-4

318H-01

250

REEL

4000

N-Channel

PowerTrench® T1

SC-4

High Voltage

Standard

Single

600

11500

±30

0.2

2.1

4.8

130

2.7

530

3.5

$0.2567

製品番号:

代理店		Stock	BUY

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High Voltage MOSFETs | FQT1N60CTF-WS

Power MOSFET, N-Channel, QFET®, 600 V, 0.2 A, 11.5 Ω, SOT-223

Overview

Product List

営業窓口へのメール

Power MOSFET, N-Channel, QFET^®, 600 V, 0.2 A, 11.5 Ω, SOT-223