High Voltage MOSFETs | FCD5N60_F085

N チャネル、SuperFET® 600 V、4.6 A、0.86 Ω

Obsolete

Data Sheet

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Overview

SuperFET® は、オン・セミコンダクター独自の新世代の高電圧 MOSFET であり、高度な電荷バランス・メカニズムを活用して優れた低オン抵抗と低ゲート電荷性能を実現します。この先端技術は、伝導損失を最小限に抑え、優れたスイッチング性能を提供、極端な dv/dt レートおよびより高いアバランシェ・エネルギーに対応するよう構成されています。その結果、SuperFET® はさまざまな車載用 DC/DC 電力変換に適しています。

  • Automotive On Board Charger
  • Automotive DC/DC Converter for HEV

  • 600V、4.6A、通常Rds(on)=860mΩ@VGS=10V
  • 非常に少量のゲート電荷(通常Qg = 16 nC)
  • UIS機能
  • RoHS 対応
  • • AEC Q101認定取得

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FCD5N60-F085

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Obsolete

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

No

N-Channel

PowerTrench® T1

TO-252-3

High Voltage

Standard

0

Single

0

600

1100

±30

5

4.6

54

-

-

-

16

570

7.6

1700

280

20

Price N/A

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信頼性データ

Die Related Summary Data

Device: FCD5N60-F085

Equivalent to wafer fab process: 3A

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

3A

26

4688824297

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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