パワー MOSFET、N チャネル、SUPERFET® III、FRFET®、650 V、58 A、50 mΩ、TO-247

Overview

技術資料および設計リソース シミュレーションモデル (3) パッケージ図面 (1) データ・シート (1)

  • Telecommunication
  • Cloud system
  • Industrial
  • Telecom power
  • Server power
  • EV charger
  • Solar / UPS
  • 700 V @ TJ = 150 oC
  • Ultra Low Gate Charge (Typ. Qg = 125 nC)
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 1051 pF)
  • Excellent body diode performance (low Qrr, robust body diode)
  • Optimized Capacitance
  • RoHS Compliant
  • 100% Avalanche Tested
  • Typ. RDS(on) = 41 mΩ

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製品:

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共有

Product Groups:

Orderable Parts:

1

製品

状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NTHL050N65S3HF

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Active

CAD Model

Pb

A

H

P

TO-247-3LD

NA

0

TUBE

450

Yes

N-Channel

PowerTrench® T1

TO-247-3

High Voltage

Standard

0

Single

0

650

50

30

5

58

378

-

-

-

125

-

-

688

-

-

$7.7431

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