High Voltage MOSFETs | NTP082N65S3F

Power MOSFET、Nチャネル、SUPERFET® III、FRFET®、650 V、40A、82mΩ、TO-220

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Overview

技術資料および設計リソース シミュレーションモデル (3) パッケージ図面 (1) データシート (1)

  • Telecommunication
  • Cloud system
  • Industrial
  • Telecom power
  • Server power
  • Solar / UPS
  • EV charger
  • 700 V @ TJ = 150 °C
  • Ultra Low Gate Charge (Typ. Qg = 81 nC)
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 722 pF)
  • Optimized Capacitance
  • Excellent body diode performance (low Qrr, robust body diode)
  • Typ. RDS(on) = 70 mΩ
  • 100% Avalanche Tested
  • RoHS Compliant

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NTP082N65S3F

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Active

CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

800

Yes

N-Channel

PowerTrench® T1

TO-220-3

High Voltage

Standard

0

Single

0

650

82

30

4.5

40

313

-

-

-

81

3410

32

678

70

-

$3.7493

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信頼性データ

Die Related Summary Data

Device: NTP082N65S3F

Equivalent to wafer fab process: 3A

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

3A

26

7287033440

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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