MOSFETs | IRF640

廃止 - 電界効果トランジスタ

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このTMOS Powe FETは、スイッチングレギュレーター、コンバーター、ソレノイド、リレードライバーなどの低電圧、高速電源スイッチングアプリケーション向けに設計されています。

  • Silicon Gate for Fast Switching Speeds
  • Low RDS(on) to Minimize On-Losses. Specified at Elevated Temperature.
  • Rugged - SOA is Power Dissipation Limited
  • Source-to-Drain Diode Characterized for Use With Inductive Loads

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