Low/Medium Voltage MOSFETs | ECH8655R

Dual N-Channel Power MOSFET 24V, 9A, 17mΩ

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Overview

ECH8655Rは、汎用スイッチングデバイス用N-Channel Power MOSFET, 24V, 9A, 17mΩ, Dual ECH8である。

  • This product is general usage and suitable for many different applications

  • 低オン抵抗
  • 2.5V駆動
  • コモンドレインタイプ
  • ゲート保護用抵抗内蔵
  • LiB充放電スイッチ用途に最適
  • 保護ダイオード入り

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Orderable Parts:

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状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

ECH8655R-TL-H

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Active

CAD Model

Pb

A

H

P

SOT-28 FL / ECH-8

318BF

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

Power 33

Low-Medium Voltage

Logic

0

Dual Common Drain

0

24

-

12

1.3

9

1.4

Q1=Q2=25.5

Q1=Q2=17

-

16.8

-

4.8

-

-

-

$0.2561

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信頼性データ

Die Related Summary Data

Device: ECH8655R-TL-H

Equivalent to wafer fab process: TRENCH FET LEGACY

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

TRENCH FET LEGACY

2

15086608915

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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