Low/Medium Voltage MOSFETs | FDB016N04AL7

N チャネル PowerTrench® MOSFET 40V、306A、1.6mΩ

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Overview

この N チャネル MOSFET は、優れたスイッチング性能を維持しながら、 オン抵抗を最小限に抑えるように構成された高度な PowerTrench® プロセスを使用して製造されます。

  • AC-DC商用パワーサプライ - サーバー & ワークステーション
  • AC-DC商用パワーサプライ - デスクトップPC
  • その他のデータプロセッシング

  • RDS(on)=1.16mΩ(通常) @ VGS=10V、ID=80A
  • 高速スイッチング速度
  • 少量のゲート電荷、QG=129nC(通常)
  • 超低RDS(on)用の高性能トレンチ技術
  • 高い電力および電流処理能力
  • RoHS対応

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDB016N04AL7

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CAD Model

Pb

A

H

P

D2PAK-7 / TO-263-7

418AY

1

245

REEL

800

N

N-Channel

PowerTrench® T1

D2PAK7

Low-Medium Voltage

Standard

0

Single

0

40

1.6

±20

3

306

283

-

-

-

129

8715

17

84

2035

230

Price N/A

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信頼性データ

Die Related Summary Data

Device: FDB016N04AL7

Equivalent to wafer fab process: RH

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

RH

0

779824089

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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