Low/Medium Voltage MOSFETs | FDB024N08BL7

NチャネルPowerTrench® MOSFET 80V、229A、2.4mΩ

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Overview

このNチャネルMOSFETは、優れたスイッチング性能を維持しながら、オン抵抗を最小限に抑えるように構成された高度なPowerTrench®プロセスを使用して製造されます。

  • AC-DC商用パワーサプライ
  • AC-DC商用パワーサプライ - サーバー & ワークステーション
  • AC-DC商用パワーサプライ - デスクトップPC
  • 電動式自転車
  • その他のデータプロセッシング

  • RDS(on) = 1.7mΩ (通常) @VGS = 10V、ID = 100A
  • 低FOM RDS(on)*QG
  • 低逆回復電荷、Qrr
  • ソフトリバースリカバリーボディーダイオード
  • 同期整流器で高効率を実現
  • 高速スイッチング速度
  • RoHS対応
  • JEDEC規格JESD22-A113FおよびIPC/JEDEC J-STD-020D.1に認定

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDB024N08BL7

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Active

CAD Model

Pb

A

H

P

D2PAK-7 / TO-263-7

418AY

1

245

REEL

800

Y

N-Channel

PowerTrench® T6

D2PAK7

Low-Medium Voltage

Standard

0

Single

0

80

2.4

±20

4.5

229

246

-

-

-

137

10170

28

112

1670

35

$1.967

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信頼性データ

Die Related Summary Data

Device: FDB024N08BL7

Equivalent to wafer fab process: RM

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

RM

0

1284986536

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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