Low/Medium Voltage MOSFETs | FDB16AN08A0

N チャネル PowerTrench® MOSFET、75 V、58 A、16 mΩ

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Overview

N チャネル PowerTrench® MOSFET 75 V、58 A、16 m Ω、 最新のシールドゲート PowerTrench® MOSFET は、小型の QSYNC とソフト逆回復固有のボディ・ダイオードの性能を高速スイッチングと組み合わせ、同期整流の効率を大幅に改善することができます。

  • AC-DC商用パワーサプライ
  • DC-DC商用パワーサプライ
  • 家電製品
  • 電動式自転車
  • RDS(on)=13mΩ(通常) @VGS=10V、ID=58A
  • Qg(tot)=28nC(通常) @ VGS = 10 V
  • 少量のミラー電荷
  • 低Qrrボディーダイオード
  • UIS機能 (単一パルスと反復パルス)

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDB16AN08A0

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Active

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418AJ

1

245

REEL

800

Yes

N-Channel

PowerTrench® T1

D2PAK

Low-Medium Voltage

Standard

0

Single

0

80

16

±20

4

58

117

-

-

-

28

1857

6.4

36

288

88

$1.323

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信頼性データ

Die Related Summary Data

Device: FDB16AN08A0

Equivalent to wafer fab process: 2C

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

2C

0

3942797527

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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