Low/Medium Voltage MOSFETs | FDD4141

PチャネルPowerTrench® MOSFET、-40V、-50A、12.3mΩ

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Overview

このPチャネルMOSFETは、独自のPowerTrench®技術を使用して製造されており、低RDS（on）および最適化されたBVDSS機能を提供して、アプリケーションで優れた性能を提供します。また、最適化されたスイッチング性能により、コンバーター/インバーターアプリケーションにおける電力損失を削減します。

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  • 最大 RDS(on) = 12.3mΩ @ VGS = -10V、ID = -12.7A
  • 最大 RDS(on) = 18.0mΩ @ VGS = -4.5V、ID = -10.4A
  • 超低RDS(ON)
    用の高性能トレンチ技術。
  • RoHS対応

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDD4141

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Active

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

N

P-Channel

PowerTrench® T1

DPAK

Low-Medium Voltage

Logic

0

Single

0

-40

12.3

±20

-3

-50

69

-

18

-

19

2058

8

26

360

210

$0.3583

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Die Related Summary Data

Device: FDD4141

Equivalent to wafer fab process: R2

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

R2

0

1067433832

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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