Low/Medium Voltage MOSFETs | FDI038AN06A0

NチャネルPowerTrench® MOSFET 60V、80A、3.8mΩ

Obsolete

Datasheet

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Overview

N-Channel PowerTrench® MOSFET 60V, 80A, 3.8mΩ

  • AC-DC商用パワーサプライ
  • AC-DC商用パワーサプライ - サーバー & ワークステーション
  • AC-DC商用パワーサプライ - デスクトップPC
  • その他のデータプロセッシング
  • その他のオートモーティブ

  • RDS(on) = 3.5mΩ (通常) @VGS = 10V、ID = 80A
  • QG(tot) = 96nC (通常) @ VGS = 10V
  • 少量のミラー電荷
  • 低Qrrボディーダイオード
  • UIS機能 (単一パルスと反復パルス)
  • AEC Q101認定取得

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDI038AN06A0

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Obsolete

CAD Model

Pb

A

H

P

I2PAK-3 / D2PAK-3 STRAIGHT LEAD

418AV

NA

0

TUBE

800

N

N-Channel

PowerTrench® T1

D2PAK

Low-Medium Voltage

Standard

0

Single

0

60

3.8

±20

4

80

310

-

-

-

96

6400

27

39

1123

367

Price N/A

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信頼性データ

Die Related Summary Data

Device: FDI038AN06A0

Equivalent to wafer fab process: 2C

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

2C

0

3698398665

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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