Low/Medium Voltage MOSFETs | FDMA86108LZ

シングル N チャネル PowerTrench® MOSFET 100V、2.2A、243mΩ

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Overview

このデバイスは、同期降圧型コンバータの最大効率と熱性能を提供するように設計されています。低 rDS (on) およびゲート電荷により、優れたスイッチング性能が提供されます。

  • This product is general usage and suitable for many different applications.
  • 最大rDS（on） = 243 mΩ @ VGS = 10 V、ID = 2.2 A
  • 最大rDS（on） = 366 mΩ @ VGS = 4.5 V、ID = 1.8 A
  • 低プロファイル；　最大 0.8 mm、新パッケージ MicroFET 2 x 2 mm
  • ハロゲン化合物、アンチモン酸化物を含まない
  • RoHS 対応

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMA86108LZ

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CAD Model

Pb

A

H

P

WDFN-6

511CZ

1

260

REEL

3000

Yes

N-Channel

PowerTrench® T1

Power 22

Low-Medium Voltage

Logic

0

Single

0

100

243

±20

3

2.2

2.4

-

366

-

1.1

116

0.5

20

23

1

$0.4264

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Die Related Summary Data

Device: FDMA86108LZ

Equivalent to wafer fab process: T7

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

T7

11

6716497626

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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