Low/Medium Voltage MOSFETs | FDMC2D8N025S

N チャネル PowerTrench® SyncFETTM 25V、124A、1.9mΩ

Obsolete

Datasheet

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Overview

FDMC2D8N025S は電力変換アプリケーションでの損失を最小限に抑えるように設計されています。シリコン技術およびパッケージ技術の両方の進歩が組み合わされ、最小の rDS(on) を実現しながら、卓越したスイッチング性能を維持します。このデバイスには、効率的なモノリシック・ショットキー・ボディ・ダイオードという利点があります。

  • This product is general usage and suitable for many different applications.
  • 最大 rDS(on) = 1.9 mΩ @ VGS = 10 V、ID = 28 A
  • 最大 rDS(on) = 2.4 mΩ @ VGS = 4.5 V、ID = 25 A
  • 超低rDS(on)の高パフォーマンス技術
  • SyncFETTMショットキーボディーダイオード
  • 100% UILテスト済み
  • RoHS に対応

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状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMC2D8N025S

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Obsolete

CAD Model

Pb

A

H

P

PQFN-8

483AW

1

260

REEL

3000

No

N-Channel

PowerTrench® T1

Power 33 (u8FL)

Low-Medium Voltage

Logic

0

Single

0

25

1.9

16

3

124

47

-

2.4

24

21

3295

-

-

-

-

Price N/A

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信頼性データ

Die Related Summary Data

Device: FDMC2D8N025S

Equivalent to wafer fab process: RN

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

RN

9

11968865347

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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